The FOD2742BR2_Q phototransistor from Onsemi features a collector emitter saturation voltage of 400mV and a current transfer ratio of 200%. It can handle a maximum collector current of 50mA and a forward current of 20mA. The device is packaged in a SOIC package and is available on tape and reel. It operates within a temperature range of -25°C to 85°C.
PackageSOIC
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Technical Specifications
Onsemi FOD2742BR2_Q technical specifications.
General
| Package/Case | SOIC |
| Collector Emitter Saturation Voltage | 400mV |
| Current Transfer Ratio | 200% |
| Forward Current | 20mA |
| Max Collector Current | 50mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -25°C |
| Number of Channels | 1 |
| Output Type | Phototransistor |
| Packaging | Tape and Reel |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FOD2742BR2_Q Datasheet
Download the complete datasheet for Onsemi FOD2742BR2_Q to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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