General purpose phototransistor optocoupler featuring a 5kV isolation voltage and 1 channel. This component offers a 200mV collector-emitter saturation voltage and a 200mV collector-emitter voltage (VCEO). With a 50mA forward current and 50mA maximum collector current, it provides a 160% current transfer ratio. The 4-pin DIP package supports through-hole mounting and operates within a temperature range of -55°C to 110°C.
PackageDIP
MountingThrough Hole
Power200mW
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Technical Specifications
Onsemi FOD817A300W technical specifications.
General
Package/Case
DIP
Collector Emitter Saturation Voltage
200mV
Collector Emitter Voltage (VCEO)
200mV
Collector-emitter Voltage-Max
200mV
Current Transfer Ratio
160%
Fall Time
18000ns
Forward Current
50mA
Height
4mm
Input Current
50mA
Input Type
DC
Isolation Voltage
5kV
Isolation Voltage-Max
5kV
Lead Free
Lead Free
Length
5.1mm
Max Collector Current
50mA
Max Input Current
50mA
Max Operating Temperature
110°C
Min Operating Temperature
-55°C
Max Output Voltage
70V
Max Power Dissipation
200mW
Mount
Through Hole
Number of Channels
1
Number of Circuits
1
Number of Elements
1
Output Current per Channel
50mA
Output Voltage
70V
Package Quantity
2000
Packaging
Box
Power Dissipation
200mW
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Breakdown Voltage
6V
Reverse Voltage
6V
Reverse Voltage (DC)
6V
RoHS Compliant
Yes
Weight
0g
Width
7mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FOD817A300W Datasheet
Download the complete datasheet for Onsemi FOD817A300W to view detailed technical specifications.
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