General purpose phototransistor optocoupler featuring 5kV isolation voltage and a 1-channel configuration. Surface mountable in a 4-pin DIP package, it operates with a maximum forward current of 50mA and provides an output current of 50mA per channel. Key electrical specifications include a collector-emitter saturation voltage of 200mV and a maximum collector-emitter voltage of 200mV, with a current transfer ratio of 160%. This RoHS compliant component is designed for operation between -55°C and 110°C.
PackageSMD/SMT
MountingSurface Mount
Power200mW
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Technical Specifications
Onsemi FOD817AS technical specifications.
General
| Package/Case | SMD/SMT |
| Collector Emitter Saturation Voltage | 200mV |
| Collector Emitter Voltage (VCEO) | 200mV |
| Collector-emitter Voltage-Max | 200mV |
| Current Transfer Ratio | 160% |
| Fall Time | 18000ns |
| Forward Current | 50mA |
| Height | 3.85mm |
| Input Current | 50mA |
| Input Type | DC |
| Isolation Voltage | 5kV |
| Isolation Voltage-Max | 5kV |
| Lead Free | Lead Free |
| Max Collector Current | 50mA |
| Max Input Current | 50mA |
| Max Operating Temperature | 110°C |
| Min Operating Temperature | -55°C |
| Max Output Voltage | 70V |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Circuits | 1 |
| Number of Elements | 1 |
| Output Current per Channel | 50mA |
| Output Voltage | 70V |
| Package Quantity | 2000 |
| Packaging | Box |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| Reverse Breakdown Voltage | 6V |
| Reverse Voltage | 6V |
| RoHS Compliant | Yes |
| Weight | 0g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FOD817AS Datasheet
Download the complete datasheet for Onsemi FOD817AS to view detailed technical specifications.
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