
General purpose phototransistor optocoupler featuring a 4-pin DIP package for through-hole mounting. Offers 5kV isolation voltage and a 200mV collector-emitter saturation voltage. Achieves a high current transfer ratio of 600% with a maximum forward current of 50mA. Operates across a wide temperature range from -55°C to 110°C, with a maximum power dissipation of 200mW. This RoHS compliant component is supplied in a 2000-unit rail/tube package.
Onsemi FOD817D300 technical specifications.
| Package/Case | PDIP |
| Collector Emitter Saturation Voltage | 200mV |
| Collector Emitter Voltage (VCEO) | 200mV |
| Collector-emitter Voltage-Max | 200mV |
| Current Transfer Ratio | 600% |
| Fall Time | 18000ns |
| Forward Current | 50mA |
| Input Current | 50mA |
| Input Type | DC |
| Isolation Voltage | 5kV |
| Lead Free | Lead Free |
| Max Collector Current | 50mA |
| Max Input Current | 50mA |
| Max Operating Temperature | 110°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Circuits | 1 |
| Number of Elements | 1 |
| Output Current per Channel | 50mA |
| Output Voltage | 70V |
| Package Quantity | 2000 |
| Packaging | Rail/Tube |
| Power Dissipation | 200mW |
| Reverse Breakdown Voltage | 6V |
| RoHS Compliant | Yes |
| Series | FOD817D |
| Weight | 0.408g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FOD817D300 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
