Surface mount phototransistor optocoupler featuring 5kV isolation voltage and 200mV collector-emitter saturation voltage. Delivers a 600% current transfer ratio with a maximum forward current of 50mA. Operates across a -55°C to 110°C temperature range, with a maximum output voltage of 70V and 200mW power dissipation. Packaged in a 4-pin DIP configuration, this RoHS compliant component is suitable for general optoelectronic isolation applications.
PackageSMD/SMT
MountingSurface Mount
Power200mW
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Technical Specifications
Onsemi FOD817DS technical specifications.
General
Package/Case
SMD/SMT
Collector Emitter Saturation Voltage
200mV
Collector Emitter Voltage (VCEO)
200mV
Collector-emitter Voltage-Max
200mV
Current Transfer Ratio
600%
Fall Time
18000ns
Forward Current
50mA
Height
3.85mm
Input Current
50mA
Input Type
DC
Isolation Voltage
5kV
Isolation Voltage-Max
5kV
Lead Free
Lead Free
Max Collector Current
50mA
Max Input Current
50mA
Max Operating Temperature
110°C
Min Operating Temperature
-55°C
Max Output Voltage
70V
Max Power Dissipation
200mW
Mount
Surface Mount
Number of Channels
1
Number of Circuits
1
Number of Elements
1
Output Current per Channel
50mA
Output Voltage
70V
Package Quantity
2000
Packaging
Box
Power Dissipation
200mW
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Breakdown Voltage
6V
Reverse Voltage
6V
RoHS Compliant
Yes
Weight
0g
Compliance
RoHS
Compliant
Datasheet
Onsemi FOD817DS Datasheet
Download the complete datasheet for Onsemi FOD817DS to view detailed technical specifications.
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