The FQAF34N20L is a high-power N-channel MOSFET with a breakdown voltage of 200V and a continuous drain current of 23A. It can handle a maximum power dissipation of 95W and operates within a temperature range of -55°C to 150°C. The device has a drain to source resistance of 75mR and a fall time of 370ns.
PolarityN-CHANNEL
Power95W
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Technical Specifications
Onsemi FQAF34N20L technical specifications.
General
| Continuous Drain Current (ID) | 23A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 75mR |
| Fall Time | 370ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Polarity | N-CHANNEL |
| Power Dissipation | 95W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 170ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FQAF34N20L Datasheet
Download the complete datasheet for Onsemi FQAF34N20L to view detailed technical specifications.
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