The FQAF70N10 is a N-channel MOSFET with a breakdown voltage of 100V and a continuous drain current of 45A. It has a drain to source resistance of 23mR and a power dissipation of 100W. The device operates within a temperature range of -55°C to 175°C. It is not RoHS compliant.
PolarityN-CHANNEL
Power100W
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Technical Specifications
Onsemi FQAF70N10 technical specifications.
General
| Continuous Drain Current (ID) | 45A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 23mR |
| Fall Time | 160ns |
| Gate to Source Voltage (Vgs) | 25V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 130ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FQAF70N10 Datasheet
Download the complete datasheet for Onsemi FQAF70N10 to view detailed technical specifications.
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