The FQB6P25TM is a P-channel MOSFET with a breakdown voltage of -250V and a continuous drain current of 6A. It features a drain to source resistance of 1.1R and a fall time of 50ns. The device is packaged in a D2PAK case and is available on tape and reel. It is RoHS compliant and operates over a temperature range of -55°C to 150°C.
PackageD2PAK
PolarityP-CHANNEL
Power3.13W
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Technical Specifications
Onsemi FQB6P25TM technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Breakdown Voltage | -250V |
| Drain to Source Resistance | 1.1R |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 3.13W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 40ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQB6P25TM Datasheet
Download the complete datasheet for Onsemi FQB6P25TM to view detailed technical specifications.
No datasheet is available for this part.