The FQD17N08TM is an N-channel MOSFET with a breakdown voltage of 80V and a continuous drain current of 12.9A. It features a drain to source resistance of 115mR and a fall time of 25ns. The device is packaged in a TO-252 case and is available on tape and reel. It operates over a temperature range of -55°C to 150°C, but is not RoHS compliant.
PackageTO-252
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Onsemi FQD17N08TM technical specifications.
General
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 12.9A |
| Drain to Source Breakdown Voltage | 80V |
| Drain to Source Resistance | 115mR |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 25V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 15ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FQD17N08TM Datasheet
Download the complete datasheet for Onsemi FQD17N08TM to view detailed technical specifications.
No datasheet is available for this part.