The FQD20N06LETF is a N-CHANNEL MOSFET with a drain to source breakdown voltage of 60V and a continuous drain current of 17.2A. It has a drain to source resistance of 60mR and a gate to source voltage of 20V. The device is packaged in a DPAK and is available on tape and reel. It operates over a temperature range of -55°C to 150°C and has a power dissipation of 2.5W.
PackageDPAK
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Onsemi FQD20N06LETF technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 17.2A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 60mR |
| Fall Time | 100ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 45ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FQD20N06LETF Datasheet
Download the complete datasheet for Onsemi FQD20N06LETF to view detailed technical specifications.
No datasheet is available for this part.