The FQD9N08TF is a N-CHANNEL MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current of 7.4A and a drain to source breakdown voltage of 80V. The device features a drain to source resistance of 210mR and a power dissipation of 2.5W. It is packaged in a DPAK package and is available on tape and reel. The FQD9TF is not RoHS compliant.
PackageDPAK
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Onsemi FQD9N08TF technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 7.4A |
| Drain to Source Breakdown Voltage | 80V |
| Drain to Source Resistance | 210mR |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 25V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 9ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FQD9N08TF Datasheet
Download the complete datasheet for Onsemi FQD9N08TF to view detailed technical specifications.
No datasheet is available for this part.