The FQD9N15TM is a N-channel MOSFET from Onsemi with a maximum operating temperature range of -55°C to 150°C. It features a continuous drain current of 7A and a drain to source breakdown voltage of 150V. The device has a power dissipation of 2.5W and a gate to source voltage of 25V. The FQD9N15TM is available in a DPAK package and is not RoHS compliant.
PackageDPAK
PolarityN-CHANNEL
Power2.5W
Quick Jump:
Technical Specifications
Onsemi FQD9N15TM technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 400mR |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 25V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 22ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FQD9N15TM Datasheet
Download the complete datasheet for Onsemi FQD9N15TM to view detailed technical specifications.
No datasheet is available for this part.