The FQI34N20TU is a N-CHANNEL power MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 31A and a drain to source breakdown voltage of 200V. The device has a drain to source resistance of 75mR and a power dissipation of 3.13W. The FQI34N20TU is packaged in rail/Tube and is not RoHS compliant.
PolarityN-CHANNEL
Power3.13W
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Technical Specifications
Onsemi FQI34N20TU technical specifications.
General
| Continuous Drain Current (ID) | 31A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 75mR |
| Fall Time | 115ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.13W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 125ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FQI34N20TU Datasheet
Download the complete datasheet for Onsemi FQI34N20TU to view detailed technical specifications.
No datasheet is available for this part.