The FQI44N10TU is an N-channel MOSFET with a drain to source breakdown voltage of 100V and a continuous drain current of 43.5A. It has a drain to source resistance of 39mR and a power dissipation of 3.75W. The device operates over a temperature range of -55°C to 175°C and is packaged in a rail/through hole configuration. The FQI44N10TU is not RoHS compliant.
PolarityN-CHANNEL
Power3.75W
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Technical Specifications
Onsemi FQI44N10TU technical specifications.
General
| Continuous Drain Current (ID) | 43.5A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 39mR |
| Fall Time | 100ns |
| Gate to Source Voltage (Vgs) | 25V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.75W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 90ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FQI44N10TU Datasheet
Download the complete datasheet for Onsemi FQI44N10TU to view detailed technical specifications.
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