The FQI5P20TU is a P-channel MOSFET with a breakdown voltage of -200V and a continuous drain current of 4.8A. It has a drain to source resistance of 1.4 ohms and a power dissipation of 3.13W. The device operates over a temperature range of -55°C to 150°C and is packaged in a rail/Tube format.
PolarityP-CHANNEL
Power3.13W
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Technical Specifications
Onsemi FQI5P20TU technical specifications.
General
| Continuous Drain Current (ID) | 4.8A |
| Drain to Source Breakdown Voltage | -200V |
| Drain to Source Resistance | 1.4R |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 3.13W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 12ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FQI5P20TU Datasheet
Download the complete datasheet for Onsemi FQI5P20TU to view detailed technical specifications.
No datasheet is available for this part.