The FQI6P25TU is a P-channel power MOSFET from Onsemi with a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current rating of 6A and a drain to source breakdown voltage of -250V. The device features a drain to source resistance of 1.1R and a power dissipation of 3.13W. The FQI6P25TU is available in a rail/Tube packaging option.
PolarityP-CHANNEL
Power3.13W
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Technical Specifications
Onsemi FQI6P25TU technical specifications.
General
| Continuous Drain Current (ID) | 6A |
| Drain to Source Breakdown Voltage | -250V |
| Drain to Source Resistance | 1.1R |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 3.13W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 40ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FQI6P25TU Datasheet
Download the complete datasheet for Onsemi FQI6P25TU to view detailed technical specifications.
No datasheet is available for this part.