The FQI7N40TU is a N-CHANNEL power MOSFET with a drain to source breakdown voltage of 400V and a continuous drain current of 7A. It has a drain to source resistance of 800mR and a gate to source voltage of 30V. The device is packaged in a rail/Tube format and has a power dissipation of 3.13W. The FQI7N40TU operates over a temperature range of -55°C to 150°C and is not RoHS compliant.
PolarityN-CHANNEL
Power3.13W
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Technical Specifications
Onsemi FQI7N40TU technical specifications.
General
| Continuous Drain Current (ID) | 7A |
| Drain to Source Breakdown Voltage | 400V |
| Drain to Source Resistance | 800mR |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.13W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 35ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FQI7N40TU Datasheet
Download the complete datasheet for Onsemi FQI7N40TU to view detailed technical specifications.
No datasheet is available for this part.