The FQI9P25TU is a P-channel FET from Onsemi with a drain to source breakdown voltage of -250V and a continuous drain current of 9.4A. It has a power dissipation of 3.13W and a drain to source resistance of 620mR. The device is packaged in a rail/Tube format and has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C.
PolarityP-CHANNEL
Power3.13W
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Technical Specifications
Onsemi FQI9P25TU technical specifications.
General
| Continuous Drain Current (ID) | 9.4A |
| Drain to Source Breakdown Voltage | -250V |
| Drain to Source Resistance | 620mR |
| Fall Time | 65ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 3.13W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 45ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FQI9P25TU Datasheet
Download the complete datasheet for Onsemi FQI9P25TU to view detailed technical specifications.
No datasheet is available for this part.