The FQP10N60C_Q is a high-power N-channel MOSFET from Onsemi, featuring a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 9.5A and a drain to source breakdown voltage of 600V. The device is packaged in a TO-220AB case and has a power dissipation of 156W. The FQP10N60C_Q also has a gate to source voltage of 30V and a drain to source resistance of 730mR.
PackageTO-220AB
PolarityN-CHANNEL
Power156W
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Technical Specifications
Onsemi FQP10N60C_Q technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 9.5A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 730mR |
| Fall Time | 77ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 156W |
| Turn-Off Delay Time | 144ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FQP10N60C_Q Datasheet
Download the complete datasheet for Onsemi FQP10N60C_Q to view detailed technical specifications.
No datasheet is available for this part.
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