The FQP11P06_Q is a P-CHANNEL FET from Onsemi with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of -60V and a continuous drain current of -11.4A. The device has a drain to source resistance of 175mR and a fall time of 45ns. It is packaged in a TO-220AB package and is available in rail/Tube packaging.
PackageTO-220AB
PolarityP-CHANNEL
Power53W
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Technical Specifications
Onsemi FQP11P06_Q technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | -11.4A |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 175mR |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 25V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 53W |
| Turn-Off Delay Time | 15ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FQP11P06_Q Datasheet
Download the complete datasheet for Onsemi FQP11P06_Q to view detailed technical specifications.
No datasheet is available for this part.