The FQP19N20C_Q is an N-channel power MOSFET from Onsemi, packaged in the TO-220AB case. It can handle a continuous drain current of 19A and has a drain-to-source breakdown voltage of 200V. The device has a drain-to-source resistance of 170mR and a power dissipation of 139W. The FQP19N20C_Q operates within a temperature range of -55°C to 150°C.
PackageTO-220AB
PolarityN-CHANNEL
Power139W
Quick Jump:
Technical Specifications
Onsemi FQP19N20C_Q technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 19A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 170mR |
| Fall Time | 115ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 139W |
| Turn-Off Delay Time | 135ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FQP19N20C_Q Datasheet
Download the complete datasheet for Onsemi FQP19N20C_Q to view detailed technical specifications.
No datasheet is available for this part.