The FQP32N20C_Q is an N-channel power MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current of 28A and a drain to source breakdown voltage of 200V. The device features a drain to source resistance of 82mR and a power dissipation of 156W. It is packaged in a TO-220AB case and is available in a rail or tube packaging format.
PackageTO-220AB
PolarityN-CHANNEL
Power156W
Quick Jump:
Technical Specifications
Onsemi FQP32N20C_Q technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 28A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 82mR |
| Fall Time | 210ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 156W |
| Turn-Off Delay Time | 245ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FQP32N20C_Q Datasheet
Download the complete datasheet for Onsemi FQP32N20C_Q to view detailed technical specifications.
No datasheet is available for this part.