This FET has a continuous drain current of 3A and a gate to source voltage of 30V. It operates within a temperature range of -55°C to 150°C. The device is mounted through a hole and packaged in a rail or tube configuration.
MountingThrough Hole
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Technical Specifications
Onsemi FQP3N50C_F080 technical specifications.
General
| Continuous Drain Current (ID) | 3A |
| Element Configuration | Single |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 10ns |
| Weight | 1.8g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP3N50C_F080 Datasheet
Download the complete datasheet for Onsemi FQP3N50C_F080 to view detailed technical specifications.
No datasheet is available for this part.