The FQP4N20TSTU is a TO-220 packaged N-channel power MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a continuous drain current of 3.6A and a drain to source breakdown voltage of 200V. The device has a power dissipation of 45W and a gate to source voltage of 30V. The FQP4N20TSTU is not RoHS compliant and is available in rail/Tube packaging.
PackageTO-220
PolarityN-CHANNEL
Power45W
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Technical Specifications
Onsemi FQP4N20TSTU technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 1.4R |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 45W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 7ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FQP4N20TSTU Datasheet
Download the complete datasheet for Onsemi FQP4N20TSTU to view detailed technical specifications.
No datasheet is available for this part.