The FQP4N50_Q is a TO-220AB packaged N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a drain to source breakdown voltage of 500V and a continuous drain current of 3.4A. The device has a power dissipation of 70W and a gate to source voltage of 30V. The FQP4N50_Q is packaged in rail/Tube packaging and has a drain to source resistance of 2.7R.
PackageTO-220AB
PolarityN-CHANNEL
Power70W
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Technical Specifications
Onsemi FQP4N50_Q technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 3.4A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 2.7R |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 70W |
| Turn-Off Delay Time | 20ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FQP4N50_Q Datasheet
Download the complete datasheet for Onsemi FQP4N50_Q to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.