The FQPF10N20T is an N-channel MOSFET with a drain to source breakdown voltage of 200V and a continuous drain current of 6.8A. It has a drain to source resistance of 360mR and a power dissipation of 40W. The device is packaged in tape and reel format and has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It is not RoHS compliant.
PolarityN-CHANNEL
Power40W
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Technical Specifications
Onsemi FQPF10N20T technical specifications.
General
| Continuous Drain Current (ID) | 6.8A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 360mR |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 40W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 26ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FQPF10N20T Datasheet
Download the complete datasheet for Onsemi FQPF10N20T to view detailed technical specifications.
No datasheet is available for this part.