The FQPF18N50V2T is an N-channel power MOSFET from Onsemi with a drain to source breakdown voltage of 500V and continuous drain current of 18A. It has a gate to source voltage of 30V and a maximum operating temperature of 150°C. The device is packaged in a quantity of 50 per rail/Tube and has a power dissipation of 69W.
PolarityN-CHANNEL
Power69W
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Technical Specifications
Onsemi FQPF18N50V2T technical specifications.
General
| Continuous Drain Current (ID) | 18A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 265mR |
| Fall Time | 110ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 69W |
| Turn-Off Delay Time | 95ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FQPF18N50V2T Datasheet
Download the complete datasheet for Onsemi FQPF18N50V2T to view detailed technical specifications.
No datasheet is available for this part.
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