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Technical Specifications
Onsemi FQPF4N25 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 2.8A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 1.75R |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 200pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 32W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 32W |
| Rds On Max | 1.75R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 6.4ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQPF4N25 Datasheet
Download the complete datasheet for Onsemi FQPF4N25 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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