The FQPF58N08T is an N-channel MOSFET with a maximum operating temperature range of -55°C to 175°C. It has a continuous drain current rating of 35A and a drain to source breakdown voltage of 80V. The device features a drain to source resistance of 24mR and a power dissipation of 55W. The FQPF58N08T is packaged in a rail/tube format with a quantity of 50 units per package.
PolarityN-CHANNEL
Power55W
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Technical Specifications
Onsemi FQPF58N08T technical specifications.
General
| Continuous Drain Current (ID) | 35A |
| Drain to Source Breakdown Voltage | 80V |
| Drain to Source Resistance | 24mR |
| Fall Time | 95ns |
| Gate to Source Voltage (Vgs) | 25V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 55W |
| Turn-Off Delay Time | 70ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FQPF58N08T Datasheet
Download the complete datasheet for Onsemi FQPF58N08T to view detailed technical specifications.
No datasheet is available for this part.