The FQPF70N08 is an N-channel MOSFET with a breakdown voltage of 80V and a continuous drain current of 43.6A. It has a drain to source resistance of 17mR and a power dissipation of 60W. The device operates over a temperature range of -55°C to 175°C and is not RoHS compliant. The FQPF70N08 features a fall time of 145ns and a turn-off delay time of 90ns.
PolarityN-CHANNEL
Power60W
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Technical Specifications
Onsemi FQPF70N08 technical specifications.
General
| Continuous Drain Current (ID) | 43.6A |
| Drain to Source Breakdown Voltage | 80V |
| Drain to Source Resistance | 17mR |
| Fall Time | 145ns |
| Gate to Source Voltage (Vgs) | 25V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Polarity | N-CHANNEL |
| Power Dissipation | 60W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 90ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FQPF70N08 Datasheet
Download the complete datasheet for Onsemi FQPF70N08 to view detailed technical specifications.
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