The FQPF90N08 is an N-channel MOSFET with a drain to source breakdown voltage of 80V and a continuous drain current of 44A. It has a drain to source resistance of 16mR and a power dissipation of 62W. The device operates over a temperature range of -55°C to 175°C. It is not RoHS compliant.
PolarityN-CHANNEL
Power62W
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Technical Specifications
Onsemi FQPF90N08 technical specifications.
General
| Continuous Drain Current (ID) | 44A |
| Drain to Source Breakdown Voltage | 80V |
| Drain to Source Resistance | 16mR |
| Fall Time | 160ns |
| Gate to Source Voltage (Vgs) | 25V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Polarity | N-CHANNEL |
| Power Dissipation | 62W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 100ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FQPF90N08 Datasheet
Download the complete datasheet for Onsemi FQPF90N08 to view detailed technical specifications.
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