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Technical Specifications
Onsemi FQT1N80TF_WS technical specifications.
General
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 200mA |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 20R |
| Drain to Source Voltage (Vdss) | 800V |
| Element Configuration | Single |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 195pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.1W |
| Rds On Max | 20R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.188g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQT1N80TF_WS Datasheet
Download the complete datasheet for Onsemi FQT1N80TF_WS to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.