The FQU12P10TU is a P-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current of 9.4A and a drain to source breakdown voltage of -100V. The device has a drain to source resistance of 290mR and a power dissipation of 2.5W. It is packaged in a rail/Tube format and is not RoHS compliant.
PolarityP-CHANNEL
Power2.5W
Quick Jump:
Technical Specifications
Onsemi FQU12P10TU technical specifications.
General
| Continuous Drain Current (ID) | 9.4A |
| Drain to Source Breakdown Voltage | -100V |
| Drain to Source Resistance | 290mR |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 35ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FQU12P10TU Datasheet
Download the complete datasheet for Onsemi FQU12P10TU to view detailed technical specifications.
No datasheet is available for this part.