The FQU2P25TU is a P-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current rating of 2A and a drain to source breakdown voltage of -250V. The device features a drain to source resistance of 4 ohms and a power dissipation of 2.5W. The FQU2P25TU is packaged in a rail/Tube format and is not RoHS compliant.
PolarityP-CHANNEL
Power2.5W
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Technical Specifications
Onsemi FQU2P25TU technical specifications.
General
| Continuous Drain Current (ID) | 2A |
| Drain to Source Breakdown Voltage | -250V |
| Drain to Source Resistance | 4R |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 12ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FQU2P25TU Datasheet
Download the complete datasheet for Onsemi FQU2P25TU to view detailed technical specifications.
No datasheet is available for this part.