The FSB560A_Q transistor from Onsemi features a maximum collector-emitter voltage of 60V and a maximum collector current of 2A. It has a gain bandwidth product of 75MHz and a minimum current gain of 70. The device is designed to operate within a temperature range of -55°C to 150°C and has a maximum power dissipation of 500mW. The transistor is packaged in a tape and reel format with 3000 units per reel and is available in an NPN polarity.
PolarityNPN
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Technical Specifications
Onsemi FSB560A_Q technical specifications.
General
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 60V |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 75MHz |
| hFE Min | 70 |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Series | FSB560 |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FSB560A_Q Datasheet
Download the complete datasheet for Onsemi FSB560A_Q to view detailed technical specifications.
No datasheet is available for this part.