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Technical Specifications
Onsemi H11A617BW technical specifications.
General
| Package/Case | DIP |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 70V |
| Collector-emitter Voltage-Max | 400mV |
| Current Transfer Ratio | 125% |
| Fall Time | 18000ns |
| Forward Current | 50mA |
| Input Type | DC |
| Max Collector Current | 50mA |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -55°C |
| Max Output Voltage | 70V |
| Max Power Dissipation | 200mW |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Output Current per Channel | 50mA |
| Package Quantity | 2000 |
| Packaging | Rail/Tube |
| Power Dissipation | 200mW |
| Reverse Breakdown Voltage | 6V |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi H11A617BW Datasheet
Download the complete datasheet for Onsemi H11A617BW to view detailed technical specifications.
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