The H11A617DW is a bipolar transistor from Onsemi with a maximum collector current of 50mA and a maximum operating temperature of 100°C. It features a collector-emitter saturation voltage of 400mV and a maximum output voltage of 70V. The transistor is packaged in a DIP package and is available in quantities of 2000. It is RoHS compliant and suitable for use in through-hole mounting applications.
PackageDIP
MountingThrough Hole
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Technical Specifications
Onsemi H11A617DW technical specifications.
General
| Package/Case | DIP |
| Collector Emitter Saturation Voltage | 400mV |
| Collector-emitter Voltage-Max | 400mV |
| Current Transfer Ratio | 320% |
| Input Type | DC |
| Max Collector Current | 50mA |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -55°C |
| Max Output Voltage | 70V |
| Max Power Dissipation | 200mW |
| Mount | Through Hole |
| Number of Channels | 1 |
| Output Current per Channel | 50mA |
| Package Quantity | 2000 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi H11A617DW Datasheet
Download the complete datasheet for Onsemi H11A617DW to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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