The H11AA2TVM is a PNP transistor with a collector-emitter voltage rating of 30V and a maximum collector current of 50mA. It has a maximum power dissipation of 250mW and operates over a temperature range of -40°C to 100°C. The device is packaged in a DIP package and is available in quantities of 1000. It is suitable for use in a variety of applications, including general-purpose switching and amplification.
PackageDIP
MountingThrough Hole
Power250mW
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Technical Specifications
Onsemi H11AA2TVM technical specifications.
General
| Package/Case | DIP |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 400mV |
| Forward Current | 60mA |
| Input Type | AC |
| Max Collector Current | 50mA |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Max Output Voltage | 30V |
| Max Power Dissipation | 250mW |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Output Current per Channel | 50mA |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Power Dissipation | 250mW |
| Weight | 0.030477oz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi H11AA2TVM Datasheet
Download the complete datasheet for Onsemi H11AA2TVM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.