High-performance optocoupler featuring a 5kV isolation voltage and a Darlington output stage. This general-purpose component offers a high current transfer ratio of 7500% and a maximum collector current of 80mA. Designed for through-hole mounting in a PDIP package, it operates across a wide temperature range from -55°C to 100°C with a maximum power dissipation of 250mW. The device provides 35V collector-emitter voltage and a low 1V collector-emitter saturation voltage.
PackagePDIP
MountingThrough Hole
Power250mW
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Technical Specifications
Onsemi H11B815 technical specifications.
General
| Package/Case | PDIP |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 35V |
| Collector-emitter Voltage-Max | 1V |
| Current Transfer Ratio | 7500% |
| Fall Time | 250000ns |
| Forward Current | 50mA |
| Input Type | DC |
| Isolation Voltage | 5kV |
| Lead Free | Lead Free |
| Max Collector Current | 80mA |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Circuits | 1 |
| Number of Elements | 1 |
| Output Current per Channel | 80mA |
| Output Voltage | 35V |
| Package Quantity | 2000 |
| Packaging | Rail/Tube |
| Power Dissipation | 250mW |
| Reverse Breakdown Voltage | 6V |
| RoHS Compliant | Yes |
| Series | H11B815 |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi H11B815 Datasheet
Download the complete datasheet for Onsemi H11B815 to view detailed technical specifications.
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