The H11D2_Q is a DC input transistor with a collector emitter saturation voltage of 400mV and a maximum collector current of 100mA. It is packaged in a PDIP package and is rated for operation between -55°C and 100°C. The transistor has a maximum power dissipation of 300mW and is available in bulk packaging.
PackagePDIP
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Technical Specifications
Onsemi H11D2_Q technical specifications.
General
| Package/Case | PDIP |
| Collector Emitter Saturation Voltage | 400mV |
| Input Type | DC |
| Max Collector Current | 100mA |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Packaging | Bulk |
| Series | H11D2 |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi H11D2_Q Datasheet
Download the complete datasheet for Onsemi H11D2_Q to view detailed technical specifications.
No datasheet is available for this part.