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Technical Specifications
Onsemi H11D2M technical specifications.
General
Package/Case
PDIP
Collector Emitter Saturation Voltage
400mV
Collector Emitter Voltage (VCEO)
300V
Collector-emitter Voltage-Max
400mV
Current Transfer Ratio
20%
Forward Current
10mA
Input Type
DC
Max Collector Current
100mA
Max Operating Temperature
100°C
Min Operating Temperature
-40°C
Max Output Voltage
300V
Max Power Dissipation
300mW
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Output Current per Channel
100mA
Package Quantity
1000
Packaging
Bulk
Power Dissipation
300mW
Reverse Breakdown Voltage
6V
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
Onsemi H11D2M Datasheet
Download the complete datasheet for Onsemi H11D2M to view detailed technical specifications.
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