High voltage phototransistor output optocoupler, 6-pin PDIP package, offering 5.25kV isolation voltage. Features a maximum collector current of 100mA and a maximum output voltage of 200V. Operates with a forward current up to 80mA and a collector-emitter voltage of 400mV. Includes a current transfer ratio of 20% and a fall time of 5µs. Rated for a maximum power dissipation of 300mW, with an operating temperature range of -40°C to 100°C. Through-hole mount, RoHS compliant, supplied in bulk packaging.
PackagePDIP
MountingThrough Hole
Power300mW
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Technical Specifications
Onsemi H11D3M technical specifications.
General
| Package/Case | PDIP |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 400mV |
| Collector-emitter Voltage-Max | 400mV |
| Current Transfer Ratio | 20% |
| Fall Time | 5us |
| Forward Current | 80mA |
| Input Type | DC |
| Isolation Voltage | 5.25kV |
| Max Collector Current | 100mA |
| Max Input Current | 80mA |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 300mW |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Output Current per Channel | 100mA |
| Output Voltage | 200V |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Reverse Breakdown Voltage | 6V |
| RoHS Compliant | Yes |
| Series | H11D3M |
| Weight | 0.855g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi H11D3M Datasheet
Download the complete datasheet for Onsemi H11D3M to view detailed technical specifications.
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