PackageDIP
MountingThrough Hole
Power260mW
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Technical Specifications
Onsemi H11G2TVM technical specifications.
General
| Package/Case | DIP |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 1V |
| Collector-emitter Voltage-Max | 1V |
| Forward Current | 60mA |
| Input Type | DC |
| Max Input Current | 60mA |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Max Output Voltage | 80V |
| Max Power Dissipation | 260mW |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Rail/Tube |
| Power Dissipation | 260mW |
| Reverse Breakdown Voltage | 6V |
| RoHS Compliant | Yes |
| Weight | 0.864g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi H11G2TVM Datasheet
Download the complete datasheet for Onsemi H11G2TVM to view detailed technical specifications.
No datasheet is available for this part.
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