The H11N2TM diode from Onsemi features a unidirectional configuration with a reverse breakdown voltage of 6V. It can handle a maximum power dissipation of 250mW and has a forward current rating of 30mA. The device is packaged in a DIP format and is suitable for through-hole mounting. The H11N2TM operates within a temperature range of -40°C to 85°C and is compliant with RoHS regulations.
PackageDIP
MountingThrough Hole
Power250mW
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Technical Specifications
Onsemi H11N2TM technical specifications.
General
| Package/Case | DIP |
| Direction | Unidirectional |
| Fall Time | 12ns |
| Forward Current | 30mA |
| Input Type | DC |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Max Output Current | 50mA |
| Max Power Dissipation | 250mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Output Current | 50mA |
| Output Current per Channel | 50mA |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Power Dissipation | 250mW |
| Propagation Delay | 100ns |
| Radiation Hardening | No |
| Reverse Breakdown Voltage | 6V |
| RoHS Compliant | Yes |
| Series | H11N2TM |
| Turn-On Delay Time | 330ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi H11N2TM Datasheet
Download the complete datasheet for Onsemi H11N2TM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.