The HGTG10N120BND_Q is a high-power transistor packaged in a TO-247-3 case, rated for a maximum collector-emitter voltage of 1.2kV and a maximum collector current of 35A. It can handle a maximum power dissipation of 298W and operates within a temperature range of -55°C to 150°C. The transistor is available in quantities of 300, packaged in rail or tube packaging.
PackageTO-247-3
Power298W
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Technical Specifications
Onsemi HGTG10N120BND_Q technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Saturation Voltage | 2.45V |
| Collector-emitter Voltage-Max | 1.2kV |
| Max Collector Current | 35A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 300 |
| Packaging | Rail/Tube |
| Power Dissipation | 298W |
| Series | HGTG10N120 |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HGTG10N120BND_Q Datasheet
Download the complete datasheet for Onsemi HGTG10N120BND_Q to view detailed technical specifications.
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