The HUF76413D3ST is a TO-252 packaged N-CHANNEL MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It can handle a continuous drain current of 20A and a power dissipation of 60W. The device has a drain to source breakdown voltage of 60V and a drain to source resistance of 49mR. It also features a gate to source voltage of 16V and turn-off delay times of 48ns.
PackageTO-252
PolarityN-CHANNEL
Power60W
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Technical Specifications
Onsemi HUF76413D3ST technical specifications.
General
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 49mR |
| Fall Time | 42ns |
| Gate to Source Voltage (Vgs) | 16V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 60W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 48ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi HUF76413D3ST Datasheet
Download the complete datasheet for Onsemi HUF76413D3ST to view detailed technical specifications.
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