The HUFA75337G3 is an N-CHANNEL power MOSFET with a maximum operating temperature range of -55°C to 175°C. It features a drain to source breakdown voltage of 55V and a continuous drain current of 75A. The device has a maximum power dissipation of 175W and a drain to source resistance of 14mR. It is packaged in a TO-247-3 package and is mounted through a hole. The HUFA75337G3 is RoHS compliant and part of the UltraFET series.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power175W
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Technical Specifications
Onsemi HUFA75337G3 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 14mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.775nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 175W |
| Mount | Through Hole |
| Package Quantity | 150 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 175W |
| Rds On Max | 14mR |
| RoHS Compliant | Yes |
| Series | UltraFET™ |
| Turn-Off Delay Time | 31ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HUFA75337G3 Datasheet
Download the complete datasheet for Onsemi HUFA75337G3 to view detailed technical specifications.
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