The IRF640B_FP001_Q is a N-CHANNEL power MOSFET from Onsemi with a Drain to Source Breakdown Voltage of 200V and a Continuous Drain Current of 11.4A. It features a TO-220 package and a maximum operating temperature of 150°C. The device has a Drain to Source Resistance of 180mR and a Power Dissipation of 139W. It is suitable for use in a variety of applications including power supplies and motor control circuits.
PackageTO-220
PolarityN-CHANNEL
Power139W
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Technical Specifications
Onsemi IRF640B_FP001_Q technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 11.4A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 180mR |
| Fall Time | 110ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 139W |
| Turn-Off Delay Time | 145ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi IRF640B_FP001_Q Datasheet
Download the complete datasheet for Onsemi IRF640B_FP001_Q to view detailed technical specifications.
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