The IRLHS6376TRPBF is a 2 N-Channel FET from Onsemi, packaged in a SOIC case and available in tape and reel packaging. It has a maximum drain to source voltage of 30V and a continuous drain current of 4A. The device is designed for surface mount applications and has an input capacitance of 400pF. It can handle a maximum power dissipation of 2W.
PackageSOIC
MountingSurface Mount
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Technical Specifications
Onsemi IRLHS6376TRPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | 2 N-Channel |
| Input Capacitance | 400pF |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Rds On Max | 60mR |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi IRLHS6376TRPBF Datasheet
Download the complete datasheet for Onsemi IRLHS6376TRPBF to view detailed technical specifications.
No datasheet is available for this part.