The J212_Q is an N-channel JFET transistor packaged in a TO-92 case. It can handle a continuous drain current of 40mA and a gate to source voltage of -25V. The device is rated for operation between -55°C and 150°C. Maximum power dissipation is 350mW. The transistor is available in bulk packaging.
PackageTO-92
PolarityN-CHANNEL
Power350mW
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Technical Specifications
Onsemi J212_Q technical specifications.
General
| Package/Case | TO-92 |
| Continuous Drain Current (ID) | 40mA |
| Gate to Source Voltage (Vgs) | -25V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 350mW |
| Series | J211 |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi J212_Q Datasheet
Download the complete datasheet for Onsemi J212_Q to view detailed technical specifications.
No datasheet is available for this part.
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